Influence of substrate and substrate temperature on the structural, optical and surface properties of InGaN thin films prepared by RFMS method

dc.contributor.authorErdoğan, E.
dc.contributor.authorKundakçı, M.
dc.date.accessioned2020-01-29T18:53:26Z
dc.date.available2020-01-29T18:53:26Z
dc.date.issued2019
dc.departmentFakülteler, Mühendislik-Mimarlık Fakültesi, Elektrik-Elektronik Mühendisliği Bölümüen_US
dc.description.abstractIn this work, the pure InGaN thin films were grown using n-type and p-type silicon substrates at varying substrate temperatures using the sputtering method. The effects of substrate and substrate temperature on the structural, morphological and optical properties of the thin films grown were investigated. X-ray diffraction (XRD) analyzes of the obtained films illustrates crystal structures at 500? C substrate temperature, the films were found to be hexagonal. Scanning electron microscopy (SEM) was used to investigate the shape, size and surface distribution of the particles formed on film surfaces. The reflection and optical band gap (Eg) of the films were investigated from the optical analyzes taken with the UV-VIS spectrophotometer. As a result of these analyzes, it has been reached that the substrate and substrate temperature have a great influence on the structural, morphological and optical properties of the films. The experimental findings obtained in the study are compared with the studies given in the literature and the similarities and differences are discussed. © 2019 Elsevier B.V.en_US
dc.identifier.doi10.1016/j.mee.2018.12.010
dc.identifier.endpage18en_US
dc.identifier.issn0167-9317
dc.identifier.scopus2-s2.0-85060082936
dc.identifier.scopusqualityQ2
dc.identifier.startpage15en_US
dc.identifier.urihttps://dx.doi.org/10.1016/j.mee.2018.12.010
dc.identifier.urihttps://hdl.handle.net/20.500.12639/1060
dc.identifier.volume207en_US
dc.identifier.wosWOS:000460851300003
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier B.V.en_US
dc.relation.ispartofMicroelectronic Engineeringen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectInGaN growthen_US
dc.subjectSilicon substrateen_US
dc.subjectSputtering techniqueen_US
dc.subjectSubstrate temperatureen_US
dc.subjectThin filmsen_US
dc.titleInfluence of substrate and substrate temperature on the structural, optical and surface properties of InGaN thin films prepared by RFMS methoden_US
dc.typeArticle

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