Capacitance-voltage, conductance-voltage and dielectric properties of the Al/GO/p-Si semiconductor structures in wide frequency range

Abstract

In this study, the capacitance voltage (C-V), conductance-voltage (G/omega-V), series resistance-voltage (RS-V) characteristics, interface state densities and dielectric properties of Al/GO/p-type Si semiconductor structures were investigated in the frequency range of 100 to 1000 kHz by 100 kHz steps depending on the frequency at room temperature. Using the spin coating method, the graphene oxide (GO) solution was coated as a thin film layer on the front surface of the p-type Si semiconductor. The interface-state densities (NSS) of the Al/p-Si structures with GO interlayer decreased exponentially with bias from 3.93 x 1013 cm-2 eV-1 (for 100 kHz) to 5.07 x 1011 cm-2 eV-1 (for 1000) kHz. Furthermore, dielectric characteristics as known dielectric constant (epsilon '), dielectric loss (epsilon ''), loss tangent (tan delta), ac/dc electrical conductivity (sigma ac, sigma dc), electrical modulus (M ', M '') and complex impedance values (Z ', Z '') were obtained using C-V and G/omega-V measurements. Experimental results showed that dielectric values such as epsilon ', epsilon '', tan delta, sigma ac, sigma dc, ln sigma ac and ln sigma dc generally decreased with increasing frequency, while dielectric values such as M ', M '' Z ' and Z '' increased with increasing frequency. Accordingly, in the range of 100 kHz and 1 MHz, the values of epsilon ', epsilon '', and sigma ac, changed from 1.647 to 1.154, 54.922 to 1.422 and 3.052 x 10-9 to 7.905 x 10-10, respectively. Also, at the same frequencies, the electric modulus values M ' and M '' changed from 1.0 x 10-3 to 3.44 x 10-1 and 1.8 x 10-2 to 4.24 x 10-1, respectively.