Comparison of optical, electrical, and surface characteristics of InGaN thin films at non-flow and small nitrogen flow cases

dc.contributor.authorMantarcı, Asim
dc.date.accessioned2021-09-14T09:05:44Z
dc.date.available2021-09-14T09:05:44Z
dc.date.issued2021en_US
dc.departmentMeslek Yüksekokulları, Sağlık Hizmetleri Meslek Yüksekokulu, Tıbbi Hizmetler ve Teknikler Bölümüen_US
dc.description.abstractInGaN films in the non-flow and a small flow of nitrogen cases were fabricated by the RFMS (Radio Frequency Magnetron Sputter) method to compare crucial physical characteristics of its material. From the XRD analysis, application of small nitrogen flow in the InGaN thin film growth has been observed to result in changes in the crystal size, texture coefficient, and crystal structure parameters of the film. AFM results showed both films obtained have tightly packed granular, and almost homogeneous, and Nano-structural properties, but they are different in roughness, as increased by applying small nitrogen flow. Optical conductance peaks of the material in non-flow and small flow case were 1.3957 × 10 10and 1.1496 × 10 10(S / m ) , showed a decrement in optical conductance by small nitrogen flow. In the same manner, electrical conductance peaks of the material in non-flow and small flow case were 5.2512 × 10 12and 5.2236 × 10 12(S ) , showed a decrement in electrical conductance by small nitrogen flow. In addition, the electrical conductivity of the InGaN material has been obtained at higher than the optical conductivity value of the InGaN material in both cases. Also, it was noticed that direct allowed optical band gap energy non-flow and small flow cases were 2.65 and 2.69 eV, displayed increased by applied small nitrogen flow. Essentially, many noteworthy physical properties such as crystalline size, texture coefficient, optical/electrical conductivity, the surface roughness of the films have been compared and studied for the non-flow and a small flow of nitrogen cases. Therefore; a better understanding of the structural/crystal and electrical characteristics of the InGaN film by applying/optimizing different growth conditions will be able to pave the way for InGaN device studies. © 2021, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.en_US
dc.identifier.issn0306-8919
dc.identifier.orcid0000-0001-8369-3559
dc.identifier.scopus2-s2.0-85113701081
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://10.1007/s11082-021-03203-4
dc.identifier.urihttps://hdl.handle.net/20.500.12639/2891
dc.identifier.volume53en_US
dc.indekslendigikaynakScopus
dc.institutionauthorMantarcı, Asim
dc.language.isoen
dc.publisherSpringeren_US
dc.relation.ispartofOptical and Quantum Electronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectElectrical conductivityen_US
dc.subjectInGaNen_US
dc.subjectNano-structureen_US
dc.subjectNon-flowen_US
dc.subjectTexture coefficienten_US
dc.titleComparison of optical, electrical, and surface characteristics of InGaN thin films at non-flow and small nitrogen flow casesen_US
dc.typeArticle

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