Electrical and photoconductivity properties of p-Si/P3HT/Al and p-Si/P3HT:MEH-PPV/Al organic devices: Comparison study

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dc.contributor.authorGündüz, Bayram
dc.contributor.authorYahia, I.S.
dc.contributor.authorYakuphanoğlu, F.
dc.date.accessioned2020-01-29T18:53:26Z
dc.date.available2020-01-29T18:53:26Z
dc.date.issued2012
dc.departmentFakülteler, Eğitim Fakültesi, Matematik ve Fen Bilimleri Eğitimi Bölümüen_US
dc.description.abstractThe electrical and photoresponse properties of the p-Si/P3HT/Al and p-Si/P3HT:MEH-PPV/Al organic devices have been investigated by current-voltage and capacitance-voltage characteristics. The diode parameters such as ideality factor, barrier height, rectification ratio, Richardson constant, and series resistance were determined from current-voltage characteristics at different temperatures. The diodes indicate a non-ideal current-voltage behavior due to the ideality factor being higher than unity due to the effect of series resistance and the presence of an interfacial layer. The interface state density D it values of the P3HT and P3HT:MEH-PPV diodes vary from 1.829 × 10 10 to 3.825 × 10 11 eV -1 cm -2 and from 4.561 × 10 11 to 3.233 × 10 12 eV -1 cm -2, respectively. The photoconductivity properties of the diodes under various illuminations have been investigated. The photoconductivity parameters of the P3HT:MEH-PPV diode are higher than that of photoconductivity parameters of the P3HT diode. © 2012 Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/j.mee.2012.06.003
dc.identifier.endpage57en_US
dc.identifier.issn0167-9317
dc.identifier.scopus2-s2.0-84863441077
dc.identifier.scopusqualityQ2
dc.identifier.startpage41en_US
dc.identifier.urihttps://dx.doi.org/10.1016/j.mee.2012.06.003
dc.identifier.urihttps://hdl.handle.net/20.500.12639/1063
dc.identifier.volume98en_US
dc.identifier.wosWOS:000309497200008
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.relation.ispartofMicroelectronic Engineeringen_US
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectI-V and C-V measurementsen_US
dc.subjectInterface state densityen_US
dc.subjectOrganic Schottky diodeen_US
dc.subjectP3HT and MEH-PPV organic semiconductorsen_US
dc.subjectPhotoconductivity propertiesen_US
dc.subjectRectification ratioen_US
dc.titleElectrical and photoconductivity properties of p-Si/P3HT/Al and p-Si/P3HT:MEH-PPV/Al organic devices: Comparison studyen_US
dc.typeConference Object

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