Full analytical evaluation of the line shift and line width of ions in solids for Raman processes

Abstract

In this paper, we present a new analytical method to evaluate the temperature dependence of the thermal line shift and thermal line width of spectral lines in the Raman process using a simple approximation for the Debye functions. The proposed formulae guarantee the accurate and fast calculation of the thermal line shift and thermal line width. As an example of application, the analytical expression obtained is used to calculate the line shift and line width of the 2E ? 4A2 transitions in V2+:MgO at temperatures from 0 K up to 500 K. This analytical evaluation shows that our results are satisfactory for the wide range temperature variations. Copyright © 2018 John Wiley & Sons, Ltd.