Electrical and optical conductance behavior of InGaN thin films for various physical models towards optoelectronic applications

Abstract

The optical and electrical conductivity behavior of materials produced at various pressures was investigated using many physical models. The highest electrical conductivity value of the film was obtained at 799 E(-6) kPa pressure, while the lowest electrical conductivity value of the film was obtained at 1333 E(-6) kPa pressure for all models. The highest optical conductivity values of the films were obtained at 799 E(-6) kPa pressure, while the lowest optical conductivity values were obtained at 533 E(-6) kPa pressure. It was found that different pressure greatly effects on optical and electrical parameters of the films. Optical band gap energies of the films and refractive index of the films were also computed from experimental results. Raman spectroscopy detected the E-2(high) optical phonon mode of InGaN material. XRD result showed that material has different phases in different pressures. XPS results gave the bonding properties of the film and gave % the composition parameter of the film. In essence, the optical, electrical and structural, and bonding properties of the materials grown at different pressures were evaluated and discussed in this research.